In this PhD thesis, the recombination of different atomic lattices in stacked 2D materials such as twisted bilayer graphene is studied. Using the different possibilities of Low-Energy Electron... Show moreIn this PhD thesis, the recombination of different atomic lattices in stacked 2D materials such as twisted bilayer graphene is studied. Using the different possibilities of Low-Energy Electron Microscopy (LEEM), the domain forming between the two atomic layers with small differences is studied. Superlattices in three such 2D material systems are studied. In twisted bilayer graphene, the small difference is caused by a twist of approximately one degree between the layers. In graphene on SiC, the difference is caused by the lattice mismatch between a buffer layer bound to the substrate and the next graphene layer. For both, we show that domains of different shapes and sizes occur and relate them to strain and lattice mismatch. The third system studied is tantalum disulfide. In this layered material, two different superlattices occur: a superlattice between atomic layers with different atomic arrangements in the layers, so-called polytypes, and the superlattices between the atomic lattice and the Charge Density Waves (CDW). CDWs cause a large temperature dependent resistivity change. The influence of a mixture of different polytypes on the precise CDW states is studied using LEEM spectroscopy and local Low-Energy Electron Diffraction. Show less
Jong, T.A. de; Chen, X.; Jobst, J.; Krasovskii, E.E.; Tromp, R.M.; Molen, S.J. van der 2022
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological... Show moreStacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological edge states, imaging them has been instrumental to determine local variations in twisted bilayer graphene. Here, we analyse the mechanisms causing stacking domain boundary contrast in Bright Field Low-Energy Electron Microscopy (BF-LEEM) for both graphene on SiC, where domain boundaries are caused by strain and for twisted few layer graphene. We show that when domain boundaries are between the top two graphene layers, BF-LEEM contrast is observed due to amplitude contrast and corresponds well to calculations of the contrast based purely on the local stacking in the domain boundary. Conversely, for deeper-lying domain boundaries, amplitude contrast only provides a weak distinction between the inequivalent stackings in the domains themselves. However, for small domains phase contrast, where electrons from different parts of the unit cell interfere causes a very strong contrast. We derive a general rule-of-thumb of expected BF-LEEM contrast for domain boundaries in Van der Waals materials. Show less
Jong, T.A. de; Visser, L.; Jobst, J.; Tromp, R.M.; Molen, S.J. van der 2022
Terrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large... Show moreTerrace-sized, single-orientation graphene can be grown on top of a carbon buffer layer on silicon carbide by thermal decomposition. Despite its homogeneous appearance, a surprisingly large variation in electron transport properties is observed.Here, we employ Aberration-Corrected Low-Energy Electron Microscopy (AC-LEEM) to study a possible cause of this variability. We characterize the morphology of stacking domains between the graphene and the buffer layer of high-quality samples. Similar to the case of twisted bilayer graphene, the lattice mismatch between the graphene layer and the buffer layer at the growth temperature causes a moiré pattern with domain boundaries between AB and BA stackings.We analyze this moiré pattern to characterize the relative strain and to count the number of edge dislocations. Furthermore, we show that epitaxial graphene on silicon carbide is close to a phase transition, causing intrinsic disorder in the form of co-existence of anisotropic stripe domains and isotropic trigonal domains. Using adaptive geometric phase analysis, we determine the precise relative strain variation caused by these domains. We observe that the step edges of the SiC substrate influence the orientation of the domains and we discuss which aspects of the growth process influence these effects by comparing samples from different sources. Show less
Transport experiments in twisted bilayer graphene haverevealed multiple superconducting domes separated by cor-related insulating states 1–5 . These properties are generallyassociated with strongly... Show moreTransport experiments in twisted bilayer graphene haverevealed multiple superconducting domes separated by cor-related insulating states 1–5 . These properties are generallyassociated with strongly correlated states in a flat mini-bandof the hexagonal moiré superlattice as was predicted by bandstructure calculations 6–8 . Evidence for the existence of a flatband comes from local tunnelling spectroscopy 9–13 and elec-tronic compressibility measurements 14 , which report two ormore sharp peaks in the density of states that may be asso-ciated with closely spaced Van Hove singularities. However,direct momentum-resolved measurements have proved to bechallenging 15 . Here, we combine different imaging techniquesand angle-resolved photoemission with simultaneous real- andmomentum-space resolution (nano-ARPES) to directly mapthe band dispersion in twisted bilayer graphene devices nearcharge neutrality. Our experiments reveal large areas with ahomogeneous twist angle that support a flat band with a spec-tral weight that is highly localized in momentum space. The flatband is separated from the dispersive Dirac bands, which showmultiple moiré hybridization gaps. These data establish thesalient features of the twisted bilayer graphene band structure. Show less
Jong, T.A. de; Kok, D.N.L.; Torren, A.J.H. van der; Schopmans, H.; Tromp, R.M.; Molen, S.J. van der; Jobst, J. 2019
For many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space... Show moreFor many complex materials systems, low-energy electron microscopy (LEEM) offers detailed insights into morphology and crystallography by naturally combining real-space and reciprocal-space information. Its unique strength, however, is that all measurements can easily be performed energy-dependently. Consequently, one should treat LEEM measurements as multi-dimensional, spectroscopic datasets rather than as images to fully harvest this potential. Here we describe a measurement and data analysis approach to obtain such quantitative spectroscopic LEEM datasets with high lateral resolution. The employed detector correction and adjustment techniques enable measurement of true reflectivity values over four orders of magnitudes of intensity. Moreover, we show a drift correction algorithm, tailored for LEEM datasets with inverting contrast, that yields sub-pixel accuracy without special computational demands. Finally, we apply dimension reduction techniques to summarize the key spectroscopic features of datasets with hundreds of images into two single images that can easily be presented and interpreted intuitively. We use cluster analysis to automatically identify different materials within the field of view and to calculate average spectra per material. We demonstrate these methods by analyzing bright-field and dark-field datasets of few-layer graphene grown on silicon carbide and provide a high-performance Python implementation. Show less
We study the resistive evolution of a localized self-organizing magnetohydrodynamic equilibrium. In this configuration the magnetic forces are balanced by a pressure force caused by a toroidal... Show moreWe study the resistive evolution of a localized self-organizing magnetohydrodynamic equilibrium. In this configuration the magnetic forces are balanced by a pressure force caused by a toroidal depression in the pressure. Equilibrium is attained when this low pressure region prevents further expansion into the higher-pressure external plasma. We find that, for the parameters investigated, the resistive evolution of the structures follows a universal pattern when rescaled to resistive time. The finite resistivity causes both a decrease in the magnetic field strength and a finite slip of the plasma fluid against the static equilibrium. This slip is caused by a Pfirsch-Schlüter type diffusion, similar to what is seen in tokamak equilibria. The net effect is that the configuration remains in Magnetostatic equilibrium whilst it slowly grows in size. The rotational transform of the structure becomes nearly constant throughout the entire structure, and decreases according to a power law. In simulations this equilibrium is observed when highly tangled field lines relax in a high-pressure (relative to the magnetic field strength) environment, a situation that occurs when the twisted field of a coronal loop is ejected into the interplanetary solar wind. In this paper we relate this localized MHD equilibrium to magnetic clouds in the solar wind. Show less
Jong, T.A. de; Jobst, J.; Yoo, H.; Krasovskii, E.E.; Kim, P.; Molen, S.J. van der 2018
The properties of Van der Waals (VdW) heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here, the use of... Show moreThe properties of Van der Waals (VdW) heterostructures are determined by the twist angle and the interface between adjacent layers as well as their polytype and stacking. Here, the use of spectroscopic low energy electron microscopy (LEEM) and micro low energy electron diffraction (µLEED) methods to measure these properties locally is described. The authors present results on a MoS2/hBN heterostructure, but the methods are applicable to other materials. Diffraction spot analysis is used to assess the benefits of using hBN as a substrate. In addition, by making use of the broken rotational symmetry of the lattice, the cleaving history of the MoS2 flake is determined, that is, which layer stems from where in the bulk. Show less
Jong, T.A. de; Krasovskii, E.E.; Ott, C.; Tromp, R.M.; Molen, S.J. van der; Jobst, J. 2018
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer scale and its properties can be custom tailored by inserting... Show moreGraphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer scale and its properties can be custom tailored by inserting various atoms into the graphene/SiC interface. It remains unclear, however, how atoms can cross the impermeable graphene layer during this widely used intercalation process. Here we demonstrate that in contrast to the current consensus, graphene layers grown in argon atmosphere on SiC are not homogeneous, but instead are composed of domains of different crystallographic stacking as they have been observed in other systems. We show that these domains are intrinsically formed during growth and that dislocations between domains dominate the (de)intercalation dynamics. Tailoring these dislocation networks, e.g., through substrate engineering, will increase the control over the intercalation process and could open a playground for topological and correlated electron phenomena in two-dimensional superstructures. Show less
