We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a... Show moreWe develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment. Show less
