By combining low-energy electron microscopy (LEEM) with pulsed laser deposition (PLD), we have created a unique set-up to study the first stages of growth of complex metal oxides. We... Show more By combining low-energy electron microscopy (LEEM) with pulsed laser deposition (PLD), we have created a unique set-up to study the first stages of growth of complex metal oxides. We demonstrate this by investigating the growth of SrTiO3 (STO) and LaAlO3 (LAO) on STO in real-time. We follow growth by monitoring the intensity and the full-width-half-maximum (FWHM) of the specular diffracted beam at various energies. For layer-by-layer growth, we find the anticipated intensity peaks at the completion of each layer, and an oscillatory FWHM with the maximum at half-layer coverage. In the LAO on STO case, for optimal growth conditions and a LAO thickness above the critical thickness of 4 unit cells the interface between the band insulators shows conductivity. We obtain an electronic fingerprint of the growing material, by measuring the intensity of the specular beam as a function of energy at regular intervals during growth. Extending this fingerprint with the intensity dependence on the momentum parallel to the surface allows us to extract the band dispersion of unoccupied electron states of the sample surface. Significant differences in the unoccupied band structure develop between samples which are conducting and non-conducting. Show less
