We report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average different sizes (13 and... Show moreWe report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average different sizes (13 and 17 nm). The nanoparticles are deposited by means of a cluster gun technique. Their trapping across the nanogap is demonstrated by comparing the current vs voltage characteristics (I-Vs) before and after the deposition. At low temperature, the I-Vs can be well fitted to the Korotkov and Nazarov Coulomb blockade model, which captures the coexistence of single-electron tunneling and tunnel barrier suppression upon a bias voltage increase. The measurements thus show that Coulomb-blockaded devices can be made with a nanoparticle cluster source, which extends the existing possibilities to fabricate such devices to those in which it is very challenging to reduce the usual NP agglomeration given by a solution method. Show less
Bijoyendra, B.; Shahidzadeh, N.; Himanshu, M.; Belyaeva, L.; Schneider, G.F.; Bonn, D. 2018
A self-similar reaction front develops in reactive ion etching when the ions penetrate channels of shallow height h. This relates to the patterning of microchannels using a single-step etching and... Show moreA self-similar reaction front develops in reactive ion etching when the ions penetrate channels of shallow height h. This relates to the patterning of microchannels using a single-step etching and bonding, as described by Rhee et al. [Lab Chip 5, 102 (2005)]. Experimentally, we report that the front location scales as x(f) similar to ht(1/2) and the width is time-invariant and scales as delta similar to h. Mean-field reaction-diffusion theory and Knudsen diffusion give a semiquantitative understanding of these observations and allow optimization of etching times in relation to bonding requirements. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578450] Show less
Thon, S.M.; Kim, H.; Bonato, C.; Gudat, J.; Hagemeier, J.; Petroff, P.M.; Bouwmeester, D. 2011
