With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing... Show moreWith the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and nonvolatile superconducting memory elements, however, remains a challenge. Superconductor-ferromagnet hybrid devices offer a promising solution, as they combine ultrafast manipulation of spins with dissipationless readout. Here, we present a type of nonvolatile Josephson junction memory that utilizes the bistable magnetic texture of a single mesoscopic ferromagnet. We use micromagnetic simulations to design an ellipse-shaped planar junction structured from a Co/Nb bilayer. The ellipse can be prepared as uniformly magnetized or as a pair of vortices at zero applied field. The two states yield considerably different critical currents, enabling reliable electrical readout of the element. We describe the mechanism that controls the critical current by applying numerical calculations to quantify the local stray field from the ferromagnet, which shifts the superconducting interference pattern. Our approach presents a route towards realizing superconducting memory applications by combining micromagnetic modeling with bistable spin-textured junctions. Show less
In this paper we study LaAlO3/Eu1-xLaxTiO3/SrTiO3 structures with nominally x = 0, 0.1 and different thicknesses of the Eu1-xLaxTiO3 layer. We observe that both systems have many properties similar... Show moreIn this paper we study LaAlO3/Eu1-xLaxTiO3/SrTiO3 structures with nominally x = 0, 0.1 and different thicknesses of the Eu1-xLaxTiO3 layer. We observe that both systems have many properties similar to previously studied LaAlO3/EuTiO3/SrTiO3 and other oxide interfaces, such as the formation of a two-dimensional electron liquid for two unit cells of Eu1-xLaxTiO3; a metal-insulator transition driven by the increase in thickness of the Eu1-xLaxTiO3 layer; the presence of an anomalous Hall effect when driving the systems above the Lifshitz point with a back-gate voltage; and a minimum in the temperature dependence of the sheet resistance below the Lifshitz point in the one-band regime, which becomes more pronounced with increasing negative gate voltage. However, and notwithstanding the likely presence of magnetism in the system, we do not attribute that minimum to the Kondo effect, but rather to the properties of the SrTiO3 crystal and the inevitable effects of charge trapping when using back gates. Show less
Fermin, R.; Dinter, D. van; Hubert, M.; Woltjes, B.; Silaev, M.; Aarts, J.; Lahabi, K. 2022
The surprisingly low current density required for inducing the insulator to metal transition has made Ca2RuO4 an attractive candidate material for developing Mott-based electronics devices. The... Show moreThe surprisingly low current density required for inducing the insulator to metal transition has made Ca2RuO4 an attractive candidate material for developing Mott-based electronics devices. The mechanism driving the resistive switching, however, remains a controversial topic in the field of strongly correlated electron systems. Here we probe an uncovered region of phase space by studying high-purity Ca2RuO4 single crystals, using the sample size as principal tuning parameter. Upon reducing the crystal size, we find a four orders of magnitude increase in the current density required for driving Ca2RuO4 out of the insulating state into a non-equilibrium phase which is the precursor to the fully metallic phase. By integrating a microscopic platinum thermometer and performing thermal simulations, we gain insight into the local temperature during simultaneous application of current and establish that the size dependence is not a result of Joule heating. The findings suggest an inhomogeneous current distribution in the nominally homogeneous crystal. Our study calls for a reexamination of the interplay between sample size, charge current, and temperature in driving Ca2RuO4 towards the Mott insulator to metal transition. Show less
Bertelli, I.; Simon, B.G.; Yu, T.; Aarts, J.; Bauer, G.E.W.; Blanter, Y.M.; Sar, T. van der 2021
Spin waves in magnetic insulators are low-damping signal carriers that can enable a new generation of spintronic devices. The excitation, control, and detection of spin waves by metal electrodes is... Show moreSpin waves in magnetic insulators are low-damping signal carriers that can enable a new generation of spintronic devices. The excitation, control, and detection of spin waves by metal electrodes is crucial for interfacing these devices to electrical circuits. As such, it is important to understand metal-induced damping of spin-wave transport, but characterizing this process requires access to the underlying magnetic films. Here it is shown that electronic sensor spins in diamond enable imaging of spin waves that propagate underneath metals in magnetic insulators. This capability is then used to reveal a 100-fold metal-induced increase in spin-wave damping. The damping enhancement is attributed to spin-wave-induced electrical currents as well as, above a certain frequency, three-magnon scattering processes. This interpretation is supported by deriving expressions for the current-induced damping and the three-magnon threshold from the Landau-Lifshitz-Gilbert equation that agree well with the observations. The detection of buried scattering centers further highlights the technique's power for assessing spintronic device quality. These results open new avenues for studying metal - spin-wave interactions and provide access to interfacial processes such as spin-wave injection via the spin-Hall effect. Show less
Lebedev, N.; Stehno, M.; Rana, A.; Reith, P.; Gauquelin, N.; Verbeeck, J.; ... ; Aarts, J. 2021
Spin waves—the elementary excitations of magnetic materials—are prime candidate signal carriers for low-dissipation information processing. Being able to image coherent spin-wave transport is... Show moreSpin waves—the elementary excitations of magnetic materials—are prime candidate signal carriers for low-dissipation information processing. Being able to image coherent spin-wave transport is crucial for developing interference-based spin-wave devices. We introduce magnetic resonance imaging of the microwave magnetic stray fields that are generated by spin waves as a new approach for imaging coherent spin-wave transport. We realize this approach using a dense layer of electronic sensor spins in a diamond chip, which combines the ability to detect small magnetic fields with a sensitivity to their polarization. Focusing on a thin-film magnetic insulator, we quantify spin-wave amplitudes, visualize spin-wave dispersion and interference, and demonstrate time-domain measurements of spin-wave packets. We theoretically explain the observed anisotropic spin-wave patterns in terms of chiral spin-wave excitation and stray-field coupling to the sensor spins. Our results pave the way for probing spin waves in atomically thin magnets, even when embedded between opaque materials. Show less
Lebedev, N.; Stehno, M.; Rana, A.; Gauquelin, N.; Verbeeck, J.; Brinkman, A.; Aarts, J. 2020
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy... Show moreWe have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, transmission electron microscopy images revealed that the samples tend to amorphize. Still, we observe that the structures are conducting, and some of them exhibit high conductance and/or superconductivity. We established that conductivity arises mainly on the STO side of the interface, and shows all the signs of the two-dimensional electron gas usually observed at interfaces between STO and LTO or LaAlO3, including the presence of two electron bands and tunability with a gate voltage. Analysis of magnetoresistance (MR) and superconductivity indicates the presence of spatial fluctuations of the electronic properties in our samples. That can explain the observed quasilinear out-of-plane MR, as well as various features of the in-plane MR and the observed superconductivity. Show less
In LaAlO3/SrTiO3 heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent... Show moreIn LaAlO3/SrTiO3 heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen that conclusion. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3 and argue that such electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems. Show less
The two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal... Show moreThe two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO3 substrates for the growth limits its applications in terms of device fabrication. It is therefore important to find ways to deposit these materials on other substrates, preferably Si, or Si-based, in order to facilitate integration with existing technology. Interesting candidates are micron-sized nanosheets of Ca2Nb3O10 which can be used as seed layers for perovskite materials on any substrate. We have used low-energy electron microscopy (LEEM) with in-situ pulsed laser deposition to study the subsequent growth of STO and LAO on such flakes which were deposited on Si. We can follow the morphology and crystallinity of the layers during growth, as well as fingerprint their electronic properties with angle resolved reflected electron spectroscopy. We find that STO layers, deposited on the nanosheets, can be made crystalline and flat; that LAO can be grown in a layer-by-layer fashion; and that the full heterostructure shows the signature of the formation of a conducting interface. Show less
For many applications, it is important to measure the local work function of a surface with high lateral resolution. Low-energy electron microscopy is regularly employed to this end since it is, in... Show moreFor many applications, it is important to measure the local work function of a surface with high lateral resolution. Low-energy electron microscopy is regularly employed to this end since it is, in principle, very well suited as it combines high-resolution imaging with high sensitivity to local electrostatic potentials. For surfaces with areas of different work function, however, lateral electrostatic fields inevitably associated with work function discontinuities deflect the low-energy electrons and thereby cause artifacts near these discontinuities. We use ray-tracing simulations to show that these artifacts extend over hundreds of nanometers and cause an overestimation of the true work function difference near the discontinuity by a factor of 1.6 if the standard image analysis methods are used. We demonstrate on a mixed-terminated strontium titanate surface that comparing LEEM data with detailed ray-tracing simulations leads to much a more robust estimate of the work function difference. Show less
Torren, A.J.H. van der; Yuan, H.; Liao, Z.; Elshof, J.E. ten; Koster, G.; Huijben, M.; ... ; Aarts, J. 2019
The two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal... Show moreThe two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO3 substrates for the growth limits its applications in terms of device fabrication. It is therefore important to find ways to deposit these materials on other substrates, preferably Si, or Si-based, in order to facilitate integration with existing technology. Interesting candidates are micron-sized nanosheets of Ca2Nb3O10 which can be used as seed layers for perovskite materials on any substrate. We have used low-energy electron microscopy (LEEM) with in-situ pulsed laser deposition to study the subsequent growth of STO and LAO on such flakes which were deposited on Si. We can follow the morphology and crystallinity of the layers during growth, as well as fingerprint their electronic properties with angle resolved reflected electron spectroscopy. We find that STO layers, deposited on the nanosheets, can be made crystalline and flat; that LAO can be grown in a layer-by-layer fashion; and that the full heterostructure shows the signature of the formation of a conducting interface. Show less
In this paper, we address the issue of aging of oxide sputtering targets, using the example of La0.7Ca0.3MnO3 (LCMO), a material which is quite sensitive to the amount of oxygen. After prolonged... Show moreIn this paper, we address the issue of aging of oxide sputtering targets, using the example of La0.7Ca0.3MnO3 (LCMO), a material which is quite sensitive to the amount of oxygen. After prolonged use we find that the morphology of the films becomes poor: holes appear, the size of the steps between terraces becomes larger, the roughness increases, and electrical conductance in the metallic state at temperatures below the metal-insulator transition becomes smaller. We have performed experiments on reactive sputtering with water vapor in order to reverse their degradation. We discuss the growth and properties of films of LCMO on flat SrTiO3 substrates before and after the target treatment. We study both the morphological and structural changes in these films as well as the transport properties. The results indicate that a correct concentration of oxygen in the targets is important, and that a deficiency can be compensated by the water treatment, thus increasing the usable life time of targets. Show less
