Pattern formation resulting from faceted growth in zone-melted thin films

Author(s):
Pfeiffer, L.; Paine, S.; Gilmer, G.H.; Saarloos, W. van (0000-0002-8856-8105); West, K.W.
Published
1985
Publication type
Article / Letter to editor

Abstract

We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.

Date issued
1985-04-29
Language
English
Is part of
Physical Review Letters (1985), Vol. 54, no. 17, p. 1944-1947
hdl
1887/81516
doi
10.1103/PhysRevLett.54.1944