Topology-directed silicide formation: an explanation for the growth of C49-TiSi2 on the Si(100) surface

Author(s):: Hückmann, L; Cottom, J.P.; Meyer, J. (0000-0003-0146-730X); Olsson, E.

Published: 2026
Publication type: Article / Letter to editor

Date issued: 2026
Language: English
Publisher: Royal Society of Chemistry (RSC)
Is part of: Nanoscale Advances (2026), Vol. 8, no. 18, p. 5256-5266
hdl: 1887/4309654
doi: 10.1039/d6na00467a
URL: https://doi.org/10.1039/d6na00467a