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Topology-directed silicide formation: an explanation for the growth of C49-TiSi2 on the Si(100) surface
- All authors
- Hückmann, L; Cottom, J.P.; Meyer, J.; Olsson, E.
- Date
- 2026
- Journal
- Nanoscale Advances
- Volume
- 8
- Issue
- 18
- Pages
- 5256 - 5266