Measuring local moiré lattice heterogeneity of twisted bilayer graphene

Abstract

We introduce a new method to continuously map inhomogeneities of a moiré lattice and apply it to open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.04° over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results suggest that the lack of evidence for superconductivity in open devices is not a consequence of higher heterogeneity in the twist angle, but possibly due to the absence of interaction with a top hBN layer. Furthermore, our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moiré materials.